Landolt-Börnstein - Group III Condensed Matter

silicon carbide (SiC), stacking order and number of inequivalent lattice sites in SiC

Abstract

This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

Cite this page

References (0)

About this content

Title
silicon carbide (SiC), stacking order and number of inequivalent lattice sites in SiC
Book Title
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
Book DOI
10.1007/b83098
Chapter DOI
10.1007/10860305_3
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41A2β
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz

Cite this content

For information on how to reuse or republish pieces of content found on Springer Materials please contact journalpermissions@springernature.com

Citation copied