Landolt-Börnstein - Group III Condensed Matter

silicon carbide (SiC), general characterization

Abstract

This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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About this content

Title
silicon carbide (SiC), general characterization
Book Title
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
Book DOI
10.1007/b83098
Chapter DOI
10.1007/10860305_2
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41A2β
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz

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