Landolt-Börnstein - Group III Condensed Matter

silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects

Abstract

This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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Title: silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects
Book Title: Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
Book DOI: 10.1007/b83098
Chapter DOI: 10.1007/10860305_15
Part of: Landolt-Börnstein - Group III Condensed Matter
Volume: 41A2β

Editors

O. Madelung
U. Rössler
M. Schulz

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O. Madelung, U. Rössler, M. Schulz (ed.) SpringerMaterials

silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects Landolt-Börnstein - Group III Condensed Matter 41A2β (Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.)

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