Landolt-Börnstein - Group III Condensed Matter

Zinc germanium arsenide (ZnGeAs2) energy gaps, intraband and interband transition energies

Abstract

This document is part of Subvolume E ‘Ternary Compounds, Organic Semiconductors’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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Title: Zinc germanium arsenide (ZnGeAs2) energy gaps, intraband and interband transition energies
Book Title: Ternary Compounds, Organic Semiconductors
Book DOI: 10.1007/b72741
Chapter DOI: 10.1007/10717201_445
Part of: Landolt-Börnstein - Group III Condensed Matter
Volume: 41E

Editors

O. Madelung
U. Rössler
M. Schulz

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O. Madelung, U. Rössler, M. Schulz (ed.) SpringerMaterials

Zinc germanium arsenide (ZnGeAs2) energy gaps, intraband and interband transition energies Landolt-Börnstein - Group III Condensed Matter 41E (Ternary Compounds, Organic Semiconductors)

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