2 Diffusion in Si-Ge alloys

This chapter contains tables and figures which illustrate diffusion in silicon-germanium alloys. Preexponential factor (D ₀), activation energy (Q), temperature range (T-range) data and remarks are tabulated for self-diffusion in SiGe bulk crystals, interdiffusion in Si/Ge or SiGe/Si superlattices (SL), foreign-atom diffusion in Si_1-xGe_xalloys, Si/Ge, or SiGe/Si SL, and special effects related to SiGe layers. The figures include (i) diffusion coefficient D of germanium in polycrystalline versus inverse temperature 1/T, (ii) activation energy Q of germanium diffusion in polycrystalline Si_1-xGe_x versus molar Ge fraction of SiGe:Ge alloys, (iii) interdiffusion coefficient D for asymmetrically (ASL) and symmetrically (SSL) strained various SL versus inverse temperature 1/T, (iv) interdiffusion coefficient and diffusion coefficients of boron, respectively, for various SL versus compressive strain s, (v) concentration C of boron versus depth x of a strained multilayer structure with different Ge concentration, (vi) intrinsic diffusion coefficient D of boron in Si_1-xGe_x grown on Si_1-yGe_ysubstrates versus strain, (vii) concentration C of boron versus depth x in Si_0.82Ge_0.18, (vii) intrinsic diffusion coefficient D of boron in Si_1-xGe_x grown on Si_1-yGe_y substrates versus strain s of SiGe:B, (ix) concentration C of antimony versus depth x in relaxed and compressively strained Si_0.91Ge_0.09, (x) diffusion coefficient D of antimony in relaxed and compressively strained Si_0.91Ge_0.09 versus inverse temperature 1/T, (xi) activation energy Q of antimony diffusion in relaxed Si_1-xGe_x versus the Ge concentration x of SiGe:Sb.