Landolt-Börnstein - Group III Condensed Matter

2 Diffusion in Si - Figs. 101-210

Abstract

This chapter contains figures which illustrate diffusion in silicon (Si). Concentration C of gallium, nitrogen, phosphorous, arsenic, antimony, bismuth, oxygen, fluorine, chlorine, germanium in silicon versus depth x in Si and diffusion coefficient D of gallium, indium, thallium, carbon, silicon, germanium, tin, antimony, nitrogen , phosphorous, arsenic, bismuth, oxygen, sulfur, selenium, tellurium, helium and xenon in silicon versus inverse temperature 1/T are shown.

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Title: 2 Diffusion in Si - Figs. 101-210
Book Title: Diffusion in Semiconductors
Book DOI: 10.1007/b53031
Chapter DOI: 10.1007/10426818_6
Part of: Landolt-Börnstein - Group III Condensed Matter
Volume: 33A

Editors

D. L. Beke

Authors

H. Bracht
N. A. Stolwijk

Cite this content

H. Bracht, N. A. Stolwijk (1998) D. L. Beke (ed.) SpringerMaterials

2 Diffusion in Si - Figs. 101-210 Landolt-Börnstein - Group III Condensed Matter 33A (Diffusion in Semiconductors)

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