2 Diffusion in Si

This chapter lists data for diffusion of solute elements in silicon. Solute elements of group IA (hydrogen group) such as H, Li, Na, K, Rb, Cs, Be, Mg, Ca, Sc, Ce, Pr, Pm, Dy, Er, Tm, Yb, Lu, Ti, Zr and Hf, solute elements of group VB (vanadium group) such as V, Nb, Ta, Cr, Mo and W, Solute elements of group VIIB ( manganese group) such as Mn, Re, Fe, Ru and Os, solute elements of group VIII (cobalt group) such as Co, Rh and Ir, solute elements of group VIII (nickel group) such as Ni, Pd and Pt, solute elements of group IB (copper group) such as Cu, Ag and Au, solute elements of group IIB (zinc group) such as Zn, Cd, Hg, B, Al, Ga, In and Tl, solute elements of group IVA (carbon group) such as C, Si, Ge, Sn and Pb, solute elements of group VA (nitrogen group) such as N, P, As, Sb and Bi, solute elements of group VIA (oxygen group) such as O, S, Se and Te, solute elements of group VIIA (fluorine group) such as F, Cl and I, solute elements of group VIIIA (helium group) such as He, Ne, Ar, Kr and Xe are given. D₀, Q, T-range data and methods and remarks are also listed for these solute elements. The methods include mass spectroscopy, annealing, hydrogenation, Hall measurements, electrochemical permeation, ion bombardment-induced H injection, infrared reflectance spectroscopy, chemical sectioning, four-point-probe combined with mechanical sectioning, X-ray irradiation, C-V measurement, and pn-junction method.