4 Diffusion in silicides

This chapter discusses diffusion in silicides. It contains introduction, diffusion controlled formation of silicide thin films and bulk silicides, tracer diffusion in silicides, and figures and references for diffusion in silicides. The diffusion controlled formation of silicide thin films such as Tb-Si, Er-Si, Ti-Si, Zr-Si, Hf-Si, V-Si, Cr-Si, Mo-Si, W-Si, Mn-Si, Fe-Si, Ru-Si, Os-Si, Rh-Si, Ir-Si, Co-Si, Ni-Si, Pd-Si, and Pt-Si are listed in a table. The diffusion controlled formation of bulk silicides such as Ti-Si, Nb-Si, Ta-Si, Mo-Si, W-Si, Co-Si, Ni-Si, and Cu-Si are tabulated. Tracer diffusion in silicides such as TiSi₂, TaSi₂, Cr₃Si, MoSi₂, WSi₂, Fe₃Si, CoSi₂, Ni₂Si, Ni₅Si₂, Pd₂Si, PtSi are also tabulated. Growth constants of TbSi_1.7 and ErSi_1.7, TiSi₂, V₃Si, VSi₂, CrSi₂, MoSi₂, WSi₂, MnSi, FeSi, Ru₂Si₃, Os₂Si₃, IrSi, RhSi, CoSi, CoSi₂, Co₂Si, Ni₂Si, NiSi, NiSi₂, Pd₂Si and Pt₂Si thin films versus inverse temperature are plotted. Growth constants k of "bulk" Ti silicides, Nb₅Si₃, Ta₅Si₃,Mo₅Si₃, W₅Si₃, WSi₂, Co silicides Ni₅Si₂ and Cu₃Si versus inverse temperature are illustrated. Diffusion coefficients D of ³³P in TaSi₂, Ge, P and As in TiSi₂, As in MoSi₂, B, P, As and Sb in WSi₂, ⁵⁹Fe and ⁷¹Ge in Fe₃Si, ⁶⁰Co, ⁶⁸Ge, B, P and As in CoSi₂, ⁶³Ni and ⁶⁸Ge in Ni₂Si, ⁶³Ni in Ni₅Si₂ and ³¹Si in Pd₂Si versus inverse temperature are plotted.