Landolt-Börnstein - Group III Condensed Matter

GaP, GaAs, GaSb, InP, InAs, InSb; Figs. 344 - 363

Abstract

This chapter contains photoemission and inverse photoemission illustrations of gallium antimonide (GaSb), indium arsenide (InAs), indium phosphide (InP) and indium antimonide (InSb) III-V compound semiconductors. Normal emission angle-resolved photoemission data, angle-resolved photoemission and inverse photoemission data from the (110) surface of GaSb are illustrated. Dispersion of the surface state is measured in photoemission on the (110) surface of GaSb. Normal exit photoemission spectra from the clean and Sn-covered (110) surfaces of InP is plotted. Angle-resolved inverse photoemission spectra from the (110) surface InP, and experimental dispersion curves of unoccupied and occupied surface states on the (110) surface of InP are figured out. Normal incidence inverse photoemission data for the clean and the contaminated (110) surface of InAs is illustrated. Core level photoemission spectra of the In 4d level and the As 3d level of InAs are recorded. Normal exit photoemission data and angle-resolved photoemission spectra from the (110) surface of InSb are plotted. Normal incidence angle-resolved inverse photoemission data from the (110) surface of InSb is recorded at two initial electron energies for a clean and a contaminated surface.

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About this content

Title
GaP, GaAs, GaSb, InP, InAs, InSb; Figs. 344 - 363
Book Title
Interaction of Radiation with Surfaces and Electron Tunneling
In
8.2.2.2.4 III-V compounds
Book DOI
10.1007/b51875
Chapter DOI
10.1007/10119615_41
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24D
Editors
  • G. Chiarotti
Authors
  • A. M. Bradshaw
  • R. Hemmen
  • D. E. Ricken
  • Th. Schedel-Niedrig

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