GaP, GaAs, GaSb, InP, InAs, InSb; Figs. 321 - 343, Tables 36 - 37

This chapter provides data of photoemission and inverse photoemission of group III-V compounds particularly for gallium phosphide (GaP) and gallium arsenide (GaAs). Surface band gaps (in eV) at high symmetry points and surface core level shifts relative to the bulk binding energies for the (110) cleavage planes of III-V semiconductors are tabulated. Angle-resolved photoemission spectra, angle-resolved inverse photoemission spectra and combined angle-resolved photoemission and inverse photoemission spectra from the (110) surface of GaP are illustrated. Experimental surface band structure on the (110) surface of GaP is figured out. Similarly, for GaAs, angle-resolved photoemission spectra from the (100) surface and (110) surface, combined angle-resolved photoemission and inverse photoemission spectra from (110) surface, and inverse photoemission spectra from (110) surface are illustrated graphically. Further, the chapter shows angle-resolved constant final state (CFS) spectra from the (110) surface and core level photoemission spectra from (100) surface, (110) surface of GaAs. The comparison of quasiparticle band structure calculation with experimental data for the occupied and unoccupied surface states on the (110) surface of GaAs is figured out.