Landolt-Börnstein - Group III Condensed Matter

C, Si, Ge; Figs. 268 - 294, Tables 34 - 35

Abstract

This chapter discusses photoemission and inverse photoemission of silicon (Si) and germanium (Ge). Angle-resolved photoemission spectra from the (111)7 x 7 surface in normal emission at various photon energies, various angles of emission, various temperatures, exposure to different doses of thermally dissociated hydrogen are shown. Inverse photoemission spectra from the (111)2 x 1 surface for normal electron incidence and different initial electron energies are also shown. Ge has the diamond crystal structure with a face-centered cubic lattice constant a = 5.658Å (at 300K) and the bulk band gap 0.66 eV. Surfaces prepared by ion bombardment and annealing show a 2 x 1 reconstruction that consists of rows of dimers formed by the pairing of adjacent surface atoms. Binding energies of the occupied surface states for Ge are tabulated. Surface core level shift, relative to the bulk Ge 3d5/2 binding energy on different Ge surfaces are tabulated. Surface Brillouin zones of Ge for one of the three rotationally symmetric c(2 x 8) domains on the (111) surface is figured out. Comparison of the measured surface state dispersions on the (111)2 x 1 surface in photoemission and inverse photoemission are also illustrated.

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Title
C, Si, Ge; Figs. 268 - 294, Tables 34 - 35
Book Title
Interaction of Radiation with Surfaces and Electron Tunneling
In
8.2.2.2.1 Group IVA semiconductors
Book DOI
10.1007/b51875
Chapter DOI
10.1007/10119615_37
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24D
Editors
  • G. Chiarotti
Authors
  • A. M. Bradshaw
  • R. Hemmen
  • D. E. Ricken
  • Th. Schedel-Niedrig

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