Landolt-Börnstein - Group III Condensed Matter

C, Si, Ge; Figs. 248 - 267, Tables 30 - 33

Abstract

This chapter discusses photoemission and inverse photoemission phenomena in group IV A semiconductors, C (diamond phase) and Si. A summary of experimentally observed occupied and unoccupied surface states on diamond surfaces is presented in a table. The chapter illustrates normal emission angle-resolved photoemission spectra taken with 6.45 eV photon energy for diamond (100)1 · 1 and (100)2 · 1 surfaces, and angle-integrated photoemission spectrum for the diamond (111)1 · 1 and (111)2 · 1 surfaces. Self-consistent pseudopotential calculation of the two-dimensional band structure of a 12-layer diamond (111) slab along the symmetry lines, and local density of states (LDOS) curves for diamond (111) slab are also shown. In addition, surface soft X-ray absorption spectra for different preparations of the diamond (111) surface are compared and plotted. Illustrations also include angle-resolved two-photon photoemission spectra from the diamond (111)2 · 1 surface, and experimental 2 · 1 empty surface state dispersion. Few tables list binding energies and dispersions reported for the surface state of Si(100) 2 · 1, and illustrate surface core level shift on the Si(111) 7 · 7 surface. The chapter also presents angle-resolved photoemission spectra from various surface of silicon at various photon energies and various polar angle of emission.

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References (38)

About this content

Title
C, Si, Ge; Figs. 248 - 267, Tables 30 - 33
Book Title
Interaction of Radiation with Surfaces and Electron Tunneling
In
8.2.2.2.1 Group IVA semiconductors
Book DOI
10.1007/b51875
Chapter DOI
10.1007/10119615_36
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24D
Editors
  • G. Chiarotti
Authors
  • A. M. Bradshaw
  • R. Hemmen
  • D. E. Ricken
  • Th. Schedel-Niedrig

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