8.1.2.2.2 III-V compounds

This chapter provides data on differential reflectance of Si and Ge covalent semiconductors upon exposure to hydrogen, oxygen and water at different temperatures. Difference of the imaginary parts of the dielectric functions of a surface state layer and a bulk substrate is calculated by a three-layer model. Spectral dependence of surface photovoltage of Si and Ge for different surface treatments is calculated. Differential reflectance of Si and Ge upon oxidation is illustrated. Spectral dependence of the relative photoconductance of Si and Ge are shown for a clean surface and after an exposure to oxygen. Surface absorption of Si and Ge as measured by photothermal displacement spectroscopy is plotted. Intensity of a second-harmonic signal of Si is illustrated as a function of the polarization of the normally incident pump beam. Luminescence intensity of Ge is plotted as a function of photon energy. Optical constants of Ge are derived from ellipsometric parameters. These properties for covalent semiconductors are also studied for III-V compounds such as gallium phosphide (GaP), gallium arsenide (GaAs), gallium antimony (GaSb), indium phosphide (InP) and indium arsenide (InAs). In addition, the variations of ellipsometric angles for GaP and GaAs are calculated. Transition energies and assignments of a fine structure associated with the Ga 3d-excitation in GaAs and the In 4d-excitation in InAs are also tabulated.