Figs. 72 - 101, Table 1

This chapter discusses (110) surfaces of partially ionic compounds: GaAs, GaP, GaSb, InAs, InP, InSb, CdTe, ZnSe. Surface electronic properties of all III-V compounds present strong similarities; this is not too surprising as all have zinc-blende crystal structure and are isoelectronic. All materials are predicted to have surface states in the fundamental gap for the ideal unrelaxed surface due to the presence of unsaturated bonds. Side view of a surface atomic geometry and surface Brillouin zone for the (110) surface of III-V semiconductors are given. Photoemission (PE) and inverse photoemission (IPE) spectra for the (110) cleavage planes of III-V semiconductor compounds are illustrated. PBBS and surface band structure for the ideal unrelaxed GaAs (110) surface, theoretical PBBS and surface band structure obtained in the self-consistent pseudopotential approach and ETBM, a non-local pseudopotential approach of GaAs (110) surface are shown. Quasi-particle surface band structure of relaxed GaAs(110) and energy dispersion of surface state bands obtained by ARUPS and experimental EDCs for GaAs (110) obtained by ARUPS with photon energy hν = 26 eV are figured out. Energy position E_i of contamination sensitive structures observed in ARUPS spectra of GaAs(110) are tabulated. Off normal inverse photoemission spectra, X-ray photoemission spectra, CCV Auger spectra of GaAs are also shown. Effective density of states, normal incidence inverse photoemission spectra, angle integrated inverse photoemission spectra for a clean, resonant photoemission spectra, valence band photoemission spectra, dispersion of surface state and image state, theoretical PBBS and surface band structure of GaP (110) are illustrated.