Figs. 43 - 66, Table 22

This chapter compiles data for Miller indices of investigated orientations on Si, observed LEED surface structures and temperatures of order-disorder transitions. The chapter also contains graphical representation for Si as follows: (i) the ratio of the intensity of the (½, 0) and (0,½) LEED beams on Si (001), (ii) the intensity of the (½, 0) superlattice reflection on Si (001), (iii) STM images of the Si (001) surface with an inadvertent miscut of 0.13º, (iv) LEED-microscopic image from Si(001), (v) STM micrograph of nominally flat strainfree Si (001), (vi) orientation dependence of the ionization threshold ξ and the electron affinity χ on a cylindrically shaped Si crystal, (vii) orientation dependence of the surface position of the valence band edge E_v, below the Fermi level E_F, (viii) STM image of a Si(001) surface, (ix) domain configuration on vicinal Si(001), (x) STM filled-states-image of a D_B-type double step on Si (001), (xi) model for atomic steps on cleaved Si(111), (xii) dependence of the photoelectron spectra, I versus E, of the “dangling bond” surface states near the valence-band maximum E_v, on the step density, (xiii) differential reflectivity ΔR/R versus photon energy E for Si(111) 2 x 1, (xiv) REM images of steps and a screw dislocation on Si(111), (xv) STM image of a Si (111)7 x 7 surface with atomic (bilayer) steps, (xvi) LEED-microscopic image of Si (111) with a slip trace. Phase diagram for vicinal Si (111) is also figured out.