Landolt-Börnstein - Group III Condensed Matter

Figs. 37 - 41, Tables 19 -20

Abstract

This chapter discusses properties of different orientations of group IV semiconductors. The orientations for which the geometric structure (singular, stepped or faceted) was established are marked in the stereographic projection of germanium (Ge). Stability and properties of different orientations of Ge and Miller indices of investigated orientations, observed LEED surface structures and temperatures of order-disorder transitions T of Ge are tabulated. Miller index, angle from LIP, azimuth, zone, methods, remarks, other results, and structure step-height are also tabulated for Ge. The methods include LEED, STM, UPS, X-ray scattering. The graphical representations contains (i) orientation dependence of the ionization threshold and the electron affinity on a cylindrically shaped Ge crystal, measured by UPS, (ii) orientation dependence of the surface position of the valence band edge below the Fermi level, (iii) STM filled-states image of double steps on a vicinal Ge(001) surface, cut with a tilt of 5.4º towards the [110] azimuth, ~110 x 80Å and (iv) STM image of the Ge (111) c (2 x 8) surface, obtained at 488 K.

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References (19)

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Title
Figs. 37 - 41, Tables 19 -20
Book Title
Structure
In
2.3.2.1.2 Group IV semiconductors
Book DOI
10.1007/b41604
Chapter DOI
10.1007/10031427_46
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24A
Editors
  • G. Chiarotti
Authors
  • H. Henzler
  • W. Ranke

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