Landolt-Börnstein - Group III Condensed Matter

Tables 25 - 28, Figs. 8 - 30

Abstract

This chapter lists structural parameters of various semiconductors and atomic geometry of the various surfaces. Vertical interlayer distances for the Si(111) 1 x 1 high-temperature structure, coordinates of the adatoms and four uppermost layer atoms in the symmetry reduced unit cell for the Si (111) 7 x 7 DAS structure are tabulated. A table of the atomic positions in the five uppermost layers for the full Si (111) 7 x 7 cell is presented. Tilt angle and first and second layer atomic displacements for the relaxed (110) surfaces of III-V and II-VI semiconductors with zinc blende structure from dynamical LEED analyses are listed. For comparison, lattice constants and Phillips ionicities are also given. Structural parameters specifying the atomic relaxations of the cleavage (1010) and (1120) surfaces of compound semiconductors with the wurtzite structure are also tabulated. The semiconductors include AlAs, AlP, GaAs, GaP, GaSb, InAs, InP, InSb, CdTe, ZnS, ZnSe, ZnTe, CdS, CdSe and ZnO. Schematic LEED pattern, 2DBZ and dimer models for the 2 x 1 reconstructed (001) surface of homopolar semiconductors are illustrated. π-bonded chain model for the 2 x 1 reconstruction of the (111) surface of C, Si, and Ge is plotted. Schematic LEED patterns and 2DBZ for Si, Ge are presented. DAS model for Si (111) 7 x 7 is given. Atomic geometries of the various GaAs surface are presented. Gallium-vacancy model of the GaAs is also plotted.

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Title
Tables 25 - 28, Figs. 8 - 30
Book Title
Structure
In
2.2.2.2 Semiconductors and insulators
Book DOI
10.1007/b41604
Chapter DOI
10.1007/10031427_34
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24A
Editors
  • G. Chiarotti
Authors
  • A. Fasolino
  • A. Selloni
  • A. Shkrebtii

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