Structure · Tables 19 - 24

This chapter tabulates data for the surfaces of semiconductors and ionic compounds. Data for the (100), (110), (111), and a few high-Miller-index surfaces of GaAs are tabulated. The non-polar (110) surface has been the most extensively studied. Data for most low-Miller-index surfaces of III-V semiconductors including AlAs, AlP, GaP, GaSb, InAs, InP, InSb are reported. Data for several low-Miller-index surfaces of II-VI semiconductors compounds with both the zinc blende ZB (CdTe, ZnS, ZnSe, ZnTe) and the wurtzite (CdS, CdSe, ZnO) structure W are also tabulated. Data for the surfaces of selected ionic compounds including alkali halides and metal oxides are listed. In most cases, the observed structures show only small deviations from the ideal geometry. Crystal, surface, LEED, techniques used, preparation methods, model and remarks are listed in the tables. The techniques include LEED, AES, PES, STM, ARUPS, RHEED, X-ray diffraction, IS, HEIC, MEIS, HREM, XPS, UPS, He scattering, ELS and ISS. Displacements from the ideal positions of the atoms in the four uppermost layers for the Si(100) 2 x 1 dimer structure are listed. Coordinates of the atoms in the four uppermost layers for Si(111) 2 x 1 (π-bonded chain geometry) are also listed.