Atomic Defects in Metals · Ga

This chapter discusses the annealing behaviour of gallium (Ga). The isochronal annealing of the electrical resistivity and differential recovery of Ga after low temperature irradiation with electrons as well as with fast neutrons are illustrated. The annealing stage I has been investigated after low dose e^--irradiation and the relatively high value of T _I (as compared to the low melting temperature) has been explained by the unusual melting behaviour. There seems to be complete annealing after stage I for low dose e^--irradiation. Vacancy migration has been tentatively attributed to dose dependent annealing stage III; complete annealing is observed after this stage. Properties of Frenkel defects (FD), self-interstitial atoms (SIA), and vacancies (V) in Ga are also tabulated.