Atomic Defects in Metals · Ni

This chapter summarizes the results for the electrical resistivity annealing of irradiated (electrons and fast neurons), quenched and deformed Ni (nickel). The dose dependent stage I_E is clearly resolved for low dose electron-irradiation. The dose dependence of the peak position is graphically illustrated. A non-constant effective migration energy has been observed after quenching and attributed to the superposition of the migration of vacancies and their small agglomerates. Stage V has been observed after e^--irradiation at ≈760 K, this is in agreement with the dissolution of large self-interstitial atoms (SIA) and V-clusters observed by DXS. Similar to other metals annealing after quenching is observed at higher temperatures and total anneal at T= 1000 K. Trapping of SIA has been observed for several SA and several annealing steps have been identified within the range of stage II. Some major annealing stages have been tentatively interpreted by SIA-dissociation and binding energies have been determined. Observation of vacancy defects is summarized in a table. Properties of Frenkel pairs (FP), SIA and vacancies (V) in pure metal are tabulated.